? semiconductor components industries, llc, 2005 august, 2005 ? rev. 5 1 publication order number: BS170/d BS170 preferred device small signal mosfet 500 ma, 60 volts n?channel to?92 (to?226) features ? pb?free package is available* maximum ratings rating symbol value unit drain ?source voltage v ds 60 vdc gate?source voltage ? continuous ? non?repetitive (t p 50 s) v gs v gsm 20 40 vdc vpk drain current (note) i d 0.5 adc total device dissipation @ t a = 25 c p d 350 mw operating and storage junction temperature range t j , t stg ?55 to +150 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. note: the power dissipation of the package may result in a lower continuous drain current. *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. ordering information see detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. BS170 ayww BS170 = device code a = assembly location y = year ww = work week = pb?free package (note: microdot may be in either location) marking diagram & pin assignment d g to?92 (to?226) case 29 style 30 n?channel s 1 2 3 1 drain 3 source 2 gate 500 ma, 60 volts r ds(on) = 5.0 preferred devices are recommended choices for future use and best overall value. http://onsemi.com
BS170 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics gate reverse current (v gs = 15 vdc, v ds = 0) i gss ? 0.01 10 nadc drain?source breakdown voltage (v gs = 0, i d = 100 adc) v (br)dss 60 90 ? vdc on characteristics (note 1) gate threshold voltage (v ds = v gs , i d = 1.0 madc) v gs(th) 0.8 2.0 3.0 vdc static drain?source on resistance (v gs = 10 vdc, i d = 200 madc) r ds(on) ? 1.8 5.0 drain cutoff current (v ds = 25 vdc, v gs = 0 vdc) i d(off) ? ? 0.5 a forward transconductance (v ds = 10 vdc, i d = 250 madc) g fs ? 200 ? mmhos small?signal characteristics input capacitance (v ds = 10 vdc, v gs = 0, f = 1.0 mhz) c iss ? ? 60 pf switching characteristics turn?on time (i d = 0.2 adc) see figure 1 t on ? 4.0 10 ns turn?off time (i d = 0.2 adc) see figure 1 t off ? 4.0 10 ns 1. pulse test: pulse width 300 s, duty cycle 2.0%. ordering information device package shipping ? BS170 to?92 (to?226) 1000 unit/tube BS170g to?92 (to?226) (pb?free) 1000 unit/tube BS170rlra to?92 (to?226) 2000 tape & reel BS170rlrag to?92 (to?226) (pb?free) 2000 tape & reel BS170rlrm to?92 (to?226) 2000 tape & reel BS170rlrmg to?92 (to?226) (pb?free) 2000 tape & reel BS170rlrp to?92 (to?226) 2000 tape & reel BS170rlrpg to?92 (to?226) (pb?free) 2000 tape & reel BS170rl1 to?92 (to?226) 2000 tape & reel BS170rl1g to?92 (to?226) (pb?free) 2000 tape & reel BS170zl1 to?92 (to?226) 2000 tape & reel BS170zl1g to?92 (to?226) (pb?free) 2000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
BS170 http://onsemi.com 3 , drain current (amps) d(on) i , drain current (amps) d(on) i figure 1. switching test circuit 20 db 50 attenuator pulse generator +25 v v in 40 pf 1.0 m 50 125 50 v out to sampling scope 50 input output inverted input pulse width 10% 50% 10% 90% 90% t off t on figure 2. switching waveforms resistive switching (v in amplitude 10 volts) v in v out 2.0 1.6 1.2 0.8 0.4 0 , threshold voltage 50 150 050 100 t j , junction temperature ( c) v gs(th) v ds , drain?to?source voltage (volts) 0.8 0.4 1.2 2.0 1.6 1.0 2.0 3.0 4.0 0 v ds , drain?to?source voltage (volts) 0.8 0.4 1.2 1.6 2.0 010 20 30 v ds , drain?to?source voltage (volts) c, capacitance (pf) 0 10 2030 4050 60 40 20 80 100 40 60 figure 3. v gs(th) normalized versus temperature figure 4. on?region characteristics figure 5. output characteristics figure 6. capacitance versus drain?to?source voltage v gs = 10 v v gs = 0 v c iss c oss c rss 9.0 v 8.0 v 7.0 v 6.0 v 5.0 v 4.0 v v ds = v gs i d = 1.0 ma v gs = 10 v 9.0 v 8.0 v 7.0 v 6.0 v 5.0 v 4.0 v
BS170 http://onsemi.com 4 package dimensions case 29?11 issue al to?92 (to?226) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. style 30: pin 1. drain 2. gate 3. source r a p j l b k g h section x?x c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 ??? 12.70 ??? l 0.250 ??? 6.35 ??? n 0.080 0.105 2.04 2.66 p ??? 0.100 ??? 2.54 r 0.115 ??? 2.93 ??? v 0.135 ??? 3.43 ??? 1 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, r epresentation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 BS170/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082?1312 usa phone : 480?829?7710 or 800?344?3860 toll free usa/canada fax : 480?829?7709 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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